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There are various ways to classify MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), and the following analysis will be conducted from different dimensions to present their classification system in a logically clear manner:
MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a semiconductor device based on electric field effect to control current, widely used in modern electronic circuits, especially in switch and signal amplification scenarios, occupying a core position.
Silicon carbide MOSFET is a type of MOSFET manufactured based on silicon carbide material. Its structure mainly includes a silicon carbide substrate, an insulation layer, a gate electrode, a drain electrode, and a source electrode. In its working principle, when the voltage applied to the gate changes, the silicon carbide MOSFET can achieve control from the on state to the off state, realizing the function of power switching. Silicon carbide MOS recommendation: Junxin MOS
Short circuit capability of 1200 V SiC MOSFET and overcurrent protection solution using ready-made driver IC. Several design considerations were discussed to ensure accurate measurements. The test results indicate that the short-circuit capability of SiC MOSFET is highly correlated with the drain voltage and gate voltage, but not sensitive to the shell temperature and switching speed. By reducing the gate drive voltage or reducing the bus voltage, a longer endurance time can be achieved, but these solutions will lower the performance of SiC MOSFETs.
The switching performance of SiC MOSFET is controlled by gate drive. Voltage source gate drive (VSG) is the most widely used structure in MOSFETs due to its low cost and simplified structure.
BM2SC12xFP2-LBZ is an advanced AC/DC converter IC in the industry, which adopts an integrated package. It has built a 1700V withstand voltage SiC MOSFET and a control circuit optimized for its drive into a small surface mount package (TO263-7L). Mainly suitable for auxiliary power supply of industrial equipment such as general-purpose inverters, AC servos, commercial air conditioners, street lamps, etc. that require handling high power. In addition, it can ensure long-term stable supply, which is very suitable for industrial equipment applications. (ROHM ROHM)
The new semiconductor technology represented by silicon carbide (SiC) provides a new way to improve the comprehensive performance of HVAC. It can not only further optimize system performance, but also significantly improve system efficiency, helping HVAC meet or even exceed the new energy efficiency standards, making HVAC more cost-effective.
The application of motor drive is quite extensive, among which power MOSFET plays an important role. Anson Mei has a diverse range of power MOSFET product lines, among which NTBLS1D5N10MC unipolar, N-channel power MOSFET can meet the stringent requirements of related applications and is one of the best choices for motor drive control.
The ultra precision machining process of SiC single crystal wafers mainly involves the following processes according to their processing sequence: directional cutting, grinding (coarse grinding, fine grinding), polishing (mechanical polishing), and ultra precision polishing (chemical mechanical polishing).
Recommendation: Power modules equipped with SiC MOSFETs and SiC SBDs
