OptiMOS™ 25V MOSFETs have obvious advantages in applications. With the lowest on-resistance, lowest gate charge and lowest output capacitance in the industry, it reduces MOSFET power consumption by 20% while achieving higher performance under any load condition. In addition, the higher power density can reduce the board space of a typical power supply's buck converter by more than 40%. It performs well in applications such as voltage regulation circuits for server power supplies and switches for telecommunications/data communications to significantly improve system energy efficiency and stability.
OptiMOS™ 30V N-channel MOSFETs are mainly used for power management in notebooks. It is designed to improve EMI characteristics, extend battery life, and provide users with longer and stable power support. In scenarios where efficient power management and optimized electromagnetic interference characteristics are required, it can play an important role in ensuring stable operation and performance of equipment.
Infineon's 40V MOSFETs are optimized in several ways. For example, a Source-Down (SD) PQFN package with a size of 3.3mm x 3.3mm reduces the RDS(on) by 25%, and the thermal resistance RDS(on) between the junction and the housing is also significantly improved. In addition, the central gate version is optimized for the parallel operation of multiple devices, and the internal SD package uses an upside-down chip, so that the source potential can be connected to the PCB through the thermal strip, and ultimately the RDS(on) can be greatly reduced.
Infineon's 12V-40V n-channel power MOSFET family excels in the field of power semiconductors, providing efficient, stable and reliable solutions for many application scenarios with its rich classification, significant features and optimized performance, driving the development and application of related technologies.