IGBT (Insulated Gate Bipolar Transistor) is a core component in the field of power electronics, and its global competitive landscape presents a dual track trend of "international giants leading and local enterprises accelerating breakthroughs". The following is a systematic review of mainstream brand manufacturers from the dimensions of technical routes, market positioning, and production capacity layout:
1、 International leading brand: dual barriers of technology and production capacity
Infineon
The absolute leader with a global IGBT market share of over 30% adopts IDM (Design, Manufacturing, Packaging, Testing, and Vertical Integration) mode, leading high-voltage IGBT modules (above 3300V) and automotive grade SiC technology. After the production of the 12 inch wafer fab in Dresden, Germany, the production capacity advantage has been further consolidated, and the backlog of orders will still rank first in the world by 2025.
Fuji Electric&Mitsubishi Electric
Japanese duo, focusing on industrial grade IGBT modules and IPM intelligent power modules. Fuji Electric has a market share of over 25% in the field of photovoltaic inverters, while Mitsubishi monopolizes the supply of IGBT for Shinkansen high-speed rail traction systems. The technological barrier stems from its patent layout (such as Mitsubishi's "seventh generation microgroove cutoff technology").
Onsemi&Semikron Danfoss
Ansenmei strengthens its SiC technology through the acquisition of Xiantong Semiconductor, focusing on electric drive modules for new energy vehicles; Semicon Danfoss has become a core supplier of industrial frequency converters in Europe by improving module heat dissipation efficiency through innovative "spring contact technology".
2、 Chinese domestic leading enterprise: new energy driven domestic substitution
(1) IDM mode representative
BYD Semiconductor: a benchmark for domestic automotive grade IGBT localization, with module matching for all BYD models, with a market share of 12% in 2023, and high-voltage 1200V chips available for external supply in the photovoltaic field.
CRRC Times Electric: The only domestically produced supplier of high-voltage IGBT (6500V), monopolizing the domestic high-speed rail power system, with an annual production capacity of 240000 pieces at the Zhuzhou base.
Shilanwei: IDM full chain layout, IGBT revenue will increase by 300% year-on-year in 2023, automotive modules will enter the supply chain of BYD and Leapmotor, and the planned annual production capacity of automotive modules is 7.2 million yuan by 2025.
(2) Design and module leader
Starr Semiconductor: The global IGBT module market share is 3% (sixth place), ranking first in China. The automotive grade SiC module has been designated by Xiaopeng and NIO, and the 750V IGBT module based on the seventh generation technology will be installed in bulk in 2023.
CR Micro: Chongqing 12 inch line focuses on automotive IGBT, with a revenue growth rate of 127% in 2023, and industrial and automotive electronics accounting for over 85%.
(3) Technical characteristic enterprise
Hongwei Technology: specializes in integrating FRED chips and IGBT modules. The 750V 12 inch chip for automotive use will be mass-produced in 2023, and the substitution rate in the industrial field will rapidly increase.
Dongwei Semiconductor: Original "Three Gate IGBT" (TGBT) structure, performance benchmark for Infineon's seventh generation, with a market share in the photovoltaic inverter field exceeding 5%.
3、 Capacity expansion and emerging forces
Joint venture project
Guangzhou Qinglan Semiconductor (joint venture between Guangzhou Automobile Group and CRRC Times): the first IGBT project in South China, with a production capacity of 400000 units per year in the first phase (to be put into operation in 2023), and a total production capacity of 800000 units after the second phase reaches production in 2025, supporting automobile companies such as GAC Aion.
Regional Cluster
Jiangsu: Yangjie Technology (50% growth rate of automotive IGBT), Jiejie Microelectronics (1 million pieces/year project under construction for 6-inch wire).
Zhejiang: Hangzhou Shilanwei (12 inch line expansion), Jiaxing Sida (SiC module production line construction).
Overview of the Layout of Major IGBT Enterprises in China
|Enterprise Name | Technical Field | Capacity Status|
|Starr Semiconductor | Automotive SiC Modules/Seventh Generation IGBT | Global Module Market Share 3% (2023)|
|BYD Semiconductor | Vehicle Standard Full Voltage Module | Supporting BYD+External Car Companies, Market Share 12%|
|Era Electric | High voltage IGBT (3300V~6500V) | Annual production capacity of 240000 pieces (led by high-speed rail)|
|Silanwei | Automotive grade IPM module | 2025 target of 7.2 million yuan/year|
|CR Micro | Industrial Control/Automotive MOSFET and IGBT | Chongqing 12 inch line 30000 pieces/month (2023)|
International giants such as Infineon and Mitsubishi still dominate the high-end market, but Chinese companies have formed a three-dimensional substitution system of "IDM+design+module" in the automotive grade and photovoltaic IGBT fields. The core of future competition lies in the iteration of SiC technology (such as the silicon carbide production lines of Lida and BYD) and the speed of capacity ramp up (such as the expansion of Silanwei and Guangzhou Qinglan). The global IGBT market is expected to exceed 100 billion yuan by 2025, and local manufacturers are expected to further rewrite the market share pattern in the new energy field.