Jiangsu Changjing Technology (JSCJ), as a leading enterprise in the domestic power semiconductor field, has formed multidimensional technological advantages through the "Design, Manufacturing, Packaging and Testing" vertical integration (IDM) mode. Its core advantageous products can be systematically summarized as follows:
1、 Discrete Devices and Power Semiconductors
1. High performance diodes
Fast Recovery Diode (FRD): Adopting a planar/torch structure, the reverse recovery time is only 5ns, the forward voltage is reduced to 0.3V0.8V, and the withstand voltage reaches 300V. It supports high-frequency applications (such as new energy vehicle OBC and industrial power modules) and has been verified by automotive grade AECQ.
Schottky diode (SBD) and TVS diode: with low conduction loss (VF 25% lower than similar ones) and high junction temperature (175 ℃) characteristics, suitable for consumer electronics power protection.
2. MOSFET product matrix
Medium and low voltage trench MOSFET: By reducing gate drain capacitance, the switching speed is improved and energy consumption is reduced by 30%. It is applied in motor drive and power management.
Super junction MOSFET (SJMOS): Designed with a super junction structure, it has lower on resistance and strong avalanche resistance. It is a vehicle grade product used in electric power steering (EPS) systems to achieve precise motor control.
Wafer level packaged MOSFET: the first domestic product to break the international monopoly, with small size and excellent heat dissipation, with sales exceeding 100 million yuan in six months, leading high-end mobile phone/wearable device battery management.
3. IGBT single tube and module
FST3.0 series IGBT: adopting micro trench gate (1.6 μ m Pitch) and field termination technology, reducing on/off losses by 10%, supporting full voltage coverage of 600V1200V.
In the field of photovoltaics, adapting to different inverter requirements and improving conversion efficiency by one thousandth can significantly reduce power plant costs.
New energy vehicle main drive system: replacing imported brands, has entered the Tier 1 supply chain such as BYD, and extends the range.
2、 Power Management IC
1. Low Dropout Linear Regulator (LDO)
CJ6214 series: PSRR 90dB@1kHz Anti overshoot design, suitable for laptops/tablets.
CJ6216 series: Output noise of only 4.5 μ VRMS, used for precision circuits such as smartphone camera modules.
CJ6111 series: Static power consumption of 0.8 μ A, extending the battery life of wearable devices/electronic cigarettes.
2. DCDC converter and lithium battery protection IC
The new generation 100V/30V platform DCDC converter improves energy efficiency by 25% and supports fast charging and new energy vehicle power systems.
3、 Third generation semiconductor and wafer manufacturing capabilities
1. Silicon carbide (SiC) and gallium nitride (GaN)
SiC Schottky diodes have been mass-produced and applied in high-voltage scenarios (such as charging stations); GaN HEMT and SiC MOSFET technology reserves are aimed at new energy and data centers.
2. Independent wafer manufacturing
Providing 5/6-inch wafers through subsidiary Xinshun Microelectronics, covering diode, transistor, and MOSFET wafers:
Optimize the epitaxial layer process to improve the diode withstand voltage and recovery speed;
The amplification factor of the transistor wafer reaches 100300, with strong anti-interference ability, suitable for industrial sensors.
Summary of Core Advantages
|Product Line | Technological Breakthrough | Application Fields|
|IGBT module | FST3.0 microgroove gate design, reducing losses by 10% | New energy vehicles, photovoltaic inverters|
|Wafer level MOSFET | China's first domestically produced alternative, ultra-thin packaging | High end mobile phones/wearable devices|
|Automotive standard diode/FRD | AECQ certification, withstand voltage 300V, recovery time 5ns | Automotive OBC, industrial power supply|
|Ultra low power consumption LDO | Static current 0.8 μ A, PSRR>90dB | Wearable devices, precision electronics|
Changjing Technology achieves full chain autonomy (wafer manufacturing → packaging and testing) through IDM mode, combined with automotive grade certification and customized design (such as photovoltaic IGBT), occupying a high position in domestic substitution. Its product structure continues to tilt towards high gross profit areas (with a target of 30% for automotive electronics), and in the future, with the production of 8-inch wafer fabs, production capacity and technological barriers will be further strengthened.