The following is a systematic review based on ROHM Semiconductor's product line, presenting its four major product categories from core technologies to application solutions. Combined with technological innovation and market positioning, it clearly demonstrates its diversified layout:
1、 Silicon Carbide (SiC) Product Line (EcoSiC) ™）
ROHM has a full chain technological advantage in the SiC field, with products covering discrete devices and modular solutions, meeting industrial and automotive high-voltage needs with high voltage resistance and low loss characteristics:
SiC SBD (Schottky Barrier Diode)
Innovation point: For example, the SCS2xxNHR series adopts independent packaging design, with a pin creepage distance of 5.1mm (1.3 times that of ordinary products), and can be used for xEV 400V/800V systems without the need for resin encapsulation
Performance: Withstand voltage of 650V/1200V, current coverage of 5A-100A, in compliance with the AECQ101 standard for automotive specifications
SiC MOSFET and module
The third-generation trench gate technology (such as SCT3 series) reduces the on resistance by 50% compared to the previous generation, and when paired with a 4-pin TO247 package, reduces switch losses by 35%
Full SiC power module (such as 1200V/600A model) is used for industrial frequency converters, reducing losses by more than 24% compared to silicon-based solutions
2、 Gallium Nitride (GaN) Product Line (EcoGaN) ™）
Focusing on high-frequency and efficient scenarios, promoting miniaturization through integrated solutions:
GaN HEMT devices
Such as GNP2070TDZ (650V withstand voltage), supporting MHz switching frequency, suitable for fast charging and server power supply, with a volume reduction of 99% compared to silicon devices
Specialized driver IC
Isolation type driver BM6GD11BFJLB, CMTI immunity up to 150V/ns, matching GaN high-speed switch requirements, reducing system misoperation
3、 Silicon based power devices
Covering the medium and low voltage markets, meeting general needs with cost-effective solutions:
High voltage MOSFET (EcoMOS) ™）
Super junction MOSFET (such as R60xxVNx series), 600V withstand voltage+ultra fast recovery characteristics, suitable for industrial motor drivers
IGBT（EcoIGBT ™）
1200V IGBT achieves ultra-low conduction loss, 24% lower than competitors, used in photovoltaic inverters and UPS
Schottky diode (SBD)
RBR series optimizes VF/IR balance, reducing VF value by 25% and PMDE packaging by 42% in board area, widely used in car OBC and LED lighting
4、 Power Management IC (PMIC) and modules
Regarding system level energy efficiency and space optimization design:
DCDC converter
The BD9ExxxFP4Z series adopts SOT23 packaging, which reduces the installation area by 72% compared to traditional SOP packaging, significantly improves light load efficiency, and is suitable for PLC and white goods
Power module integration solution
Cooperate with Apex Microtechnology to develop motor drive modules (such as SA310), using bare chip integration to reduce installation area by 67%
Core Technology Summary (Compared by Product Line)
The following table compares the four major product lines horizontally, visually presenting their differentiated positioning and technological highlights:
|Product Line | Core Technologies | Representative Products | Key Performance Enhancement | Typical Application Scenarios|
| EcoSiC ™ |Trench gate MOSFET/custom package | SCT3 series, SCS2xxNHR | Voltage withstand 1700V, loss ↓ 50% | Vehicle OBC, photovoltaic inverter|
| EcoGaN ™ |HEMT+isolated driver integration | GNP2070TDZ, BM6GD11 | Switching frequency 2MHz, volume ↓ 99% | Server power supply, fast charging adapter|
|Silicon based devices | Super junction MOS/low VF SBD | RBR diode, R60xxVNx | VF ↓ 25%, packaging ↓ 42% | Industrial motors, LED headlights|
|Power IC/module | Nano Pulse Control technology | BD9E series DCDC, SA110 module | Area ↓ 72%, optimized for light load efficiency | Refrigerator/air conditioning motherboard, energy storage system|
ROHM covers the full scenario demand from consumer electronics to new energy infrastructure through two paths: material innovation (SiC/GaN) and system integration (driving IC+power module). Its "Power Eco Family" strategy focuses on energy efficiency and continues to promote the high-density and low-carbon evolution of power electronic systems.