What are the models of switch diodes?

Full analysis of switch diode models: classification, characteristics, and application scenarios
As a core component in electronic circuits, switch diodes are widely used in signal switching, rectification, protection and other scenarios. There are numerous models with significant performance differences, and the selection needs to be based on specific requirements. The following is a systematic review from four dimensions: technical classification, typical models, key parameters, and application scenarios.
1、 Classified by material and structure
1. Silicon based switch diode
Representative models: 1N4148, 1N914, BAS16, BAT54S (Schottky structure).
characteristic:
High reverse withstand voltage (50V-200V), suitable for low to medium voltage scenarios.
Positive voltage drop of 0.6V-0.9V, moderate conduction loss.
Reverse recovery time ranges from 4ns to 100ns, with excellent high-frequency performance (such as trr=4ns for 1N4148).
Application: Digital circuit signal switching, RF signal processing, power supply secondary rectification.
2. Schottky switch diode
Representative models: BAT54, 1N5817, 1N5819, SS34.
characteristic:
Low forward pressure drop (0.2V-0.5V), high efficiency, low heat generation.
Low reverse withstand voltage (20V-100V), suitable for low-voltage scenarios.
The reverse recovery time is extremely short (<10ns), and the high-frequency performance is excellent.
Applications: Low voltage drop linear regulator (LDO), battery anti reverse connection, high-speed switching power supply.
3. Silicon carbide (SiC) switch diode
Representative models: C3D04060A, C3D10060A.
characteristic:
Ultra high reverse withstand voltage (600V-1700V), suitable for high voltage scenarios.
High temperature resistance (working temperature>200 ℃), suitable for extreme environments.
The reverse recovery time is less than 50ns, and the high-frequency performance is better than traditional silicon-based diodes.
Applications: Electric vehicle charging stations, photovoltaic inverters, industrial motor drives.
2、 Classified by packaging and power
1. Small signal switch diode
Representative models: 1N4148 (DO-35), BAS16 (SOD-323), BAT54S (SOT-23).
characteristic:
Compact packaging (such as SOD-323 size 1.7 × 1.25mm), suitable for high-density PCBs.
Low power carrying capacity (continuous current<300mA), suitable for signal level applications.
Applications: Logic gate isolation, RF signal rectification, sensor signal conditioning.
2. Medium power switch diode
Representative models: 1N4007 (DO-41), FR107 (DO-204AL), MUR160 (TO-220AC).
characteristic:
High power carrying capacity (continuous current of 1A-16A), withstand voltage of 600V-1000V.
The reverse recovery time is relatively long (50ns-500ns), suitable for low-frequency rectification.
Application: Switching power supply primary rectification, motor drive freewheeling, electromagnetic compatibility (EMI) filtering.
3. High power switch diode
Representative models: RHRG30120 (TO-247), C8D20N60 (TO-247).
characteristic:
Ultra high power carrying capacity (continuous current 30A-60A), withstand voltage 600V-1200V.
Excellent heat dissipation performance (TO-247 package has low thermal resistance), suitable for high-power scenarios.
Applications: Industrial inverters, electric vehicle charging modules, high-voltage direct current transmission.
3、 Classified by special functions
1. Fast Recovery Switching Diode (FRD)
Representative models: FR107, FR207, MUR160.
characteristic:
The reverse recovery time is short (50ns-500ns), more than 10 times faster than ordinary rectifier diodes.
Suitable for high-frequency rectification (such as the secondary side of switching power supplies).
Applications: AC-DC converters, LED driver power supplies, adapters.
2. Ultra fast Recovery Switching Diode (SFRD)
Representative models: UF4007, BYV29E.
characteristic:
Reverse recovery time<50ns, better high-frequency performance.
Suitable for high-frequency switching power supplies and pulse width modulation (PWM) control.
Applications: Communication power supply, server power supply, high-frequency inverter.
3. Transient Voltage Suppressing Diode (TVS)
Representative models: P6KE6.8A, SMBJ15CA.
characteristic:
Response time<1ps, can suppress transient overvoltage (such as ESD, lightning surge).
Accurate clamping voltage to protect sensitive circuits.
Application: USB interface protection, HDMI signal cable, automotive electronic control unit (ECU).
4、 Typical application scenarios and selection suggestions
1. High frequency communication and signal processing
Scenario: 5G base station, RF front-end, digital logic gate.
Selection criteria: low trr (<10ns), low junction capacitance (Cj<2pF).
Recommended models: 1N4148 (universal), BAS16 (high-speed), BAT54S (Schottky).
2. Power management and rectification
Scenario: Switching power supply, LED driver, battery charging.
Selection criteria: high voltage withstand (>600V), low forward voltage drop (VF<0.7V).
Recommended models: FR107 (medium power), UF4007 (high frequency) C3D04060A（SiC）。
3. Automotive Electronics and Industrial Control
Scenario: Motor driven BMS、 Electromagnetic valve control.
Selection criteria: wide temperature range (-55 ℃ to+175 ℃), high reliability (AEC-Q101).
Recommended models: 1N4148WS (vehicle specification), MMBD4148 (SMD), C8D20N60 (high power).
4. Portable devices and low-power design
Scenario: TWS earphones, smartwatches, IoT modules.
Selection criteria: ultra-low power consumption (IR<1 μ A), compact packaging (SOD-323).
Recommended models: LL4148 (low leakage), BAT54S (Schottky), BAS16 (high speed).
5、 Future Trends
Material innovation: Popularization of SiC/GaN devices to improve voltage resistance and high-frequency performance.
Integration: Single chip integration of diodes with MOSFETs/IGBTs simplifies power supply design.
Intelligence: Programmable protection threshold and embedded fault diagnosis function.
Based on the above analysis, users can choose the most suitable switch diode model according to specific scenario requirements, combined with technical parameters and cost budget.