What are the internationally renowned brands of memory?

Memory, as the core branch of the semiconductor industry, exhibits a highly concentrated and segmented international brand pattern. From the three dimensions of technology roadmap, market level, and application field, combined with the latest industry trends in 2025, systematically sort out the mainstream global memory brands:
1、 International memory giant: full industry chain monopoly and cutting-edge technology leadership
Samsung
Market position: Global memory leader, with DRAM market share exceeding 40% and NAND Flash market share exceeding 30%. DRAM revenue reached $9.82 billion in the second quarter of 2024.
Technical advantages:
DRAM field: Mass production of 12nm level 32Gb DDR5, with plans to launch DDR6 in 2026 and achieve 10Gbps native speed in 2027.
NAND field: 236 layers of 3D NAND have been mass-produced, and the ninth generation V-NAND has exceeded 300 layers, using charge capture type (CTF) architecture to enhance durability.
Product layout: Covering all scenarios of consumer grade (EVO series SSD), enterprise grade (PM1743 SSD), and industrial grade (radiation resistant NAND).
SK Hynix
Market position: DRAM market share is about 25%, and the NAND field has entered the top four globally through the acquisition of Intel's business.
Technological breakthrough:
First to mass produce 1 β process DDR5, using HKMG technology to reduce power consumption by 20%.
Showcasing a 300 layer 3D NAND prototype with plans for mass production by 2025; The HBM field has launched a 12 layer stacked HBM3E with a bandwidth of 1.2TB/s.
Strategic action: Establish Solidigm to focus on enterprise grade SSDs and collaborate with Intel to develop CXL 2.0 memory expansion solutions.
Micron
Technical milestones:
DRAM: 1 β node mass production, speed coverage of 4800-7200MT/s, performance improvement of 33% per watt.
NAND: 232 layer 3D NAND shipped, with plans to launch 300+layer products by 2025.
Market strategy: In the consumer market, the Crucial brand covers SSDs and memory modules; Enterprise level focus on CXL memory modules and ZNS SSDs.
2、 Overlord in segmented fields: deep cultivation of technology and scenario based innovation
Kioxia (Armor Hero)
NAND technology: Jointly developed 218 layer 3D NAND with Western Digital, using array CMOS architecture to optimize costs.
Enterprise level layout: Launched CM7 series PCIe 5.0 SSD, with random read and write performance of up to 2800K/380K IOPS.
Western Digital
Product Matrix:
Consumer grade: SN850X series PCIe 4.0 SSD, sequentially reads 7300MB/s.
Enterprise level: Ultrastar DC SN650, optimized for hyper converged architecture.
Technical cooperation: Share BiCS FLASH technology with Kaixia to promote mass production of 162 layer QLC NAND.
Solidigm (SK Hynix subsidiary)
Differentiated competition:
Focusing on QLC NAND enterprise applications, the D7-P5520 series SSD has a write life of up to 3.5PB.
Develop Storage Class Memory (SCM) solutions to bridge the performance gap between DRAM and NAND.
3、 Consumer and niche markets: brand diversification and cost-effectiveness breakthrough
Kingston
Market coverage: The global memory module market share exceeds 70%, and SSD products are mainly A2000 (PCIe 3.0) and FURY Renegade (PCIe 4.0).
Technical features: Through rigorous compatibility testing, ensure cross platform stability.
SanDisk
Consumer level benchmark:
The Extreme Pro series SD card has a write speed of 250MB/s and supports V90 video level.
The Extreme Portable V2 mobile solid-state drive uses a USB 3.2 Gen 2x2 interface.
Yangtze River Storage (YMTC)
Technological breakthrough:
232 layer 3D NAND mass production, Xtacking 3.0 architecture achieves I/O speed of 2400MT/s.
The TiPro7000 series SSDs have a sequential read speed of 7400MB/s, approaching the PCIe 4.0 limit.
Market positioning: Focusing on high-end consumer and enterprise markets, challenging the dominant positions of Samsung and Micron.
4、 Emerging Technology Brands: AI Driven and Architecture Innovation
NVIDIA (NVIDIA)
Storage Fusion:
The GPU is equipped with HBM3 memory, and the A100/H100 chips are respectively equipped with 80GB/80GB HBM2e/HBM3.
Launch DGX SuperPOD supercomputer with integrated 960GB/s bandwidth storage pool.
AMD
Heterogeneous computing:
The Instinct MI300X accelerator card integrates 192GB HBM3 with a bandwidth of 5.2TB/s.
Introducing 3D V-Cache technology to enhance CPU cache capacity through stacked SRAM via silicon via (TSV).
Tesla (Tesla)
Car storage:
Dojo Supercomputing uses custom SSDs with a capacity of 10TB, optimized for video training data.
The HW4.0 autonomous driving platform is equipped with 16GB LPDDR5 memory and a bandwidth of 51.2GB/s.
5、 The rise of domestic brands: technological breakthroughs and domestic substitution
GigaDevice Innovation
Niche market:
SPI NAND Flash has the third highest market share in the world, with SLC NAND capacity covering 1GB-8Gb.
Launched GD25/55 series NOR Flash, supporting industrial temperature ranges from -40 ℃ to 125 ℃.
Changxin Storage (CXMT)
DRAM Progress:
Production of 17nm DDR4/LPDDR4X, with design services provided by Rambus IP support.
Plan 1 α process DDR5 with the goal of achieving large-scale production by 2026.
6、 Market Trends and Brand Competition Focus
Technological iteration acceleration:
3D NAND Layer Competition: Samsung's 300+layer product mass production is imminent, followed closely by Changjiang Storage.
HBM penetration rate increase: AI server demand drives HBM3/3E to become a flagship GPU standard.
Application scenario differentiation:
Consumer level: PCIe 5.0 SSD is popular, QLC NAND improves lifespan through main control optimization.
Enterprise level: CXL memory expansion, ZNS SSD, SCM solutions have become key to cost reduction in data centers.
Deepening domestic substitution:
Changjiang Storage and Changxin Storage have entered the high-end market through technological breakthroughs, while Zhaoyi Innovation has formed barriers in niche areas.
Policy support and capital injection accelerate the expansion of domestic brand production capacity, such as the monthly production capacity of the Changxin Phase II project in Hefei reaching 120000 pieces.
Overall, the memory brand landscape presents a "pyramid" structure: Samsung, SK Hynix, and Micron monopolize core technologies at the top; The middle tier is dominated by segmented markets such as Kaixia and Western Digital; The bottom layer is dominated by consumer brands such as Kingston and SanDisk. Domestic brands are gradually rewriting the "chip shortage and soul shortage" situation through technological breakthroughs and differentiation strategies. In the future, competition will focus on cutting-edge fields such as 3D NAND layers, HBM bandwidth, and CXL memory expansion.