What are the classifications of IGBT?

There are various classification methods for IGBT (Insulated Gate Bipolar Transistor), and the following analysis will be conducted from different dimensions to present its classification system in a logically clear manner:
1、 Classified by chip structure
Through type (PT-IGBT)
Structural features: Based on a through type N-type buffer layer structure, a P-type base region is formed through ion implantation.
Performance advantage: It has lower conduction voltage drop and switching loss, but its voltage resistance is relatively limited.
Application scenario: Early IGBT products are gradually being replaced by non through type.
Non through type (NPT-IGBT)
Structural features: Non penetrating structure, voltage blocking is achieved by optimizing the thickness of the P-type base region and N-type drift region.
Performance advantages: Improved voltage resistance, reduced switch losses, suitable for medium and high voltage scenarios.
Application scenarios: industrial drive, new energy generation and other fields.
Field Cut off Type (FS-IGBT)
Structural features: Adding a field cutoff layer on the basis of the NPT structure to further optimize the electric field distribution.
Performance advantages: Faster switching speed, lower conduction loss, suitable for high-frequency switching applications.
Application scenarios: electric vehicle charging modules, high-frequency power conversion, etc.
2、 Classified by working principle
Reverse conducting IGBT (RC-IGBT)
Structural features: Integrated anti parallel diodes to achieve forward conduction and reverse freewheeling functions.
Performance advantages: Simplify circuit design, reduce the number of components, and improve system reliability.
Application scenarios: motor drive, uninterruptible power supply (UPS), etc.
Reverse Resistance IGBT (RB-IGBT)
Structural features: It has the ability to block reverse voltage and can achieve bidirectional conduction without the need for external diodes.
Performance advantage: Suitable for scenarios that require bidirectional current control, such as matrix converters.
Application scenarios: High voltage direct current transmission, flexible alternating current transmission, etc.
3、 Classified by voltage level
Low voltage IGBT (LV-IGBT)
Voltage withstand range: usually below 600V.
Performance characteristics: Low on resistance, fast switching speed, suitable for high-frequency switching and low dropout linear regulators (LDOs).
Application scenarios: Consumer electronics power management, electric vehicle auxiliary systems, etc.
Medium Voltage IGBT (MV-IGBT)
Voltage withstand range: 600V to 3300V.
Performance characteristics: Balanced withstand voltage and conduction loss, suitable for industrial drive, new energy generation and other fields.
Application scenarios: wind power inverters, solar inverters, etc.
High voltage IGBT (HV-IGBT)
Voltage withstand range: above 3300V.
Performance characteristics: Strong voltage resistance, suitable for high-voltage direct current transmission, smart grid and other fields.
Application scenarios: Flexible DC transmission converter valves, high-voltage motor drives, etc.
4、 Classified by packaging form
Module packaged IGBT
Packaging feature: Integrating multiple IGBT chips, diodes, and driver circuits into one module.
Performance advantages: Improve power density, simplify heat dissipation design, suitable for high-power applications.
Application scenarios: electric vehicle motor controllers, industrial frequency converters, etc.
Single tube packaged IGBT
Packaging features: A single IGBT chip is independently packaged, with a small size and flexible installation.
Performance advantage: Suitable for scenarios with low power or specific installation requirements, such as consumer electronics power supplies.
Application scenarios: mobile phone chargers, laptop adapters, etc.
5、 Classified by application field
Industrial driven IGBT
Application scenarios: motor control, industrial automation, robots, etc.
Performance requirements: high reliability, low switching losses, long lifespan.
New energy IGBT
Application scenarios: solar inverters, wind power converters, energy storage systems, etc.
Performance requirements: high efficiency, wide voltage range, strong environmental resistance.
Rail Transit IGBT
Application scenarios: traction system of rail transit vehicles, auxiliary power supply system, etc.
Performance requirements: high voltage, high current, high reliability.
Smart grid IGBT
Application scenarios: Flexible AC Transmission (FACTS), High Voltage Direct Current Transmission (HVDC), etc.
Performance requirements: fast response, high-precision control, low loss.
Electric vehicle IGBT
Application scenarios: electric vehicle motor controllers, charging stations, etc.
Performance requirements: high power density, high efficiency, and high temperature resistance.
The classification system of IGBT covers multiple dimensions from structure, working principle to application scenarios. In actual selection, factors such as voltage resistance, conduction loss, switching speed, packaging size, and cost need to be comprehensively considered. For example, in electric vehicle motor controllers, module packaged IGBT has become the preferred choice due to its high power density and reliability; In solar inverters, medium voltage IGBT is widely used due to its balanced voltage resistance and efficiency performance. With the continuous advancement of technology, the classification of IGBT will be more refined to meet the demand for high-performance power devices in different fields.